품목

Wafer / Die / Mask / Reticle / Package / Material — 위험물 마킹 + BOM
  • 전체 62
  • Wafer 8
  • Die 16
  • Mask 16
  • Reticle 8
  • Package 6
  • 가스 2
  • 화학물질 6
코드 품명 유형 노드 현재고 유효기간 BOM 위험
W-300-CZ 300mm Czochralski Wafer -
0 EA
365d - SAFE
W-300-EPI 300mm Epi Wafer Wafer -
0 EA
365d - SAFE
W-300-FZ 300mm Float-Zone Wafer -
0 EA
365d - SAFE
W-300-HR 300mm High-Resistivity Wafer -
0 EA
365d - SAFE
W-300-LR 300mm Low-Resistivity Wafer -
0 EA
365d - SAFE
W-300-N 300mm Bare Wafer N-type Wafer -
0 EA
365d - SAFE
W-300-P 300mm Bare Wafer P-type Wafer -
0 EA
365d - SAFE
W-300-SOI 300mm SOI Wafer Wafer -
0 EA
365d - SAFE
D-24-LG L-24 Logic Die A Die 24nm
0 EA
- - SAFE
D-24-MCU L-24 MCU Die Die 24nm
0 EA
- - SAFE
D-18-LG L-18 Logic Die A Die 18nm
0 EA
- - SAFE
D-18-NA L-18 NAND Cell Die 18nm
0 EA
- - SAFE
D-16-FF L-16 FinFET Logic Die 16nm
0 EA
- - SAFE
D-16-FFB L-16 FinFET Logic B Die 16nm
0 EA
- - SAFE
D-12-AI L-12 AI Accelerator Die 12nm
0 EA
- - SAFE
D-12-FF L-12 FinFET Logic Die 12nm
0 EA
- - SAFE
D-12-RF L-12 RF FinFET Die 12nm
0 EA
- - SAFE
D-10-AI L-10 AI Premium Die 10nm
0 EA
- - SAFE
D-10-HP L-10 High-Performance Die 10nm
0 EA
- - SAFE
D-10-MOB L-10 Mobile SoC Die 10nm
0 EA
- - SAFE
D-08-AI L-08 AI Accelerator Die 8nm
0 EA
- - SAFE
D-08-HPC L-08 HPC Compute Die 8nm
0 EA
- - SAFE
D-08-LG L-08 Logic Die Die 8nm
0 EA
- - SAFE
D-08-MOB L-08 Mobile SoC Die 8nm
0 EA
- - SAFE
M-24-L01 L-24 Layer 01 Mask Mask 24nm
0 EA
- - SAFE
M-24-L02 L-24 Layer 02 Mask Mask 24nm
0 EA
- - SAFE
M-18-L01 L-18 Layer 01 Mask Mask 18nm
0 EA
- - SAFE
M-18-L02 L-18 Layer 02 Mask Mask 18nm
0 EA
- - SAFE
M-16-L01 L-16 Layer 01 Mask Mask 16nm
0 EA
- - SAFE
M-16-L05 L-16 Layer 05 Mask Mask 16nm
0 EA
- - SAFE
M-12-L01 L-12 Layer 01 Mask Mask 12nm
0 EA
- - SAFE
M-12-L05 L-12 Layer 05 Mask Mask 12nm
0 EA
- - SAFE
M-12-L08 L-12 Layer 08 Mask Mask 12nm
0 EA
- - SAFE
M-10-L01 L-10 Layer 01 Mask Mask 10nm
0 EA
- - SAFE
M-10-L05 L-10 Layer 05 Mask Mask 10nm
0 EA
- - SAFE
M-10-L09 L-10 Layer 09 Mask Mask 10nm
0 EA
- - SAFE
M-08-L01 L-08 Layer 01 Mask Mask 8nm
0 EA
- - SAFE
M-08-L05 L-08 Layer 05 Mask Mask 8nm
0 EA
- - SAFE
M-08-L09 L-08 Layer 09 Mask Mask 8nm
0 EA
- - SAFE
M-08-L13 L-08 Layer 13 Mask Mask 8nm
0 EA
- - SAFE
R-DUV-24 DUV Reticle L-24 Reticle 24nm
0 EA
- - SAFE
R-DUV-18 DUV Reticle L-18 Reticle 18nm
0 EA
- - SAFE
R-DUV-16 DUV Reticle L-16 Reticle 16nm
0 EA
- - SAFE
R-EUV-12 EUV Reticle L-12 Reticle 12nm
0 EA
- - SAFE
R-IMM-12 Immersion Reticle L-12 Reticle 12nm
0 EA
- - SAFE
R-EUV-10 EUV Reticle L-10 Reticle 10nm
0 EA
- - SAFE
R-EUV-08 EUV Reticle L-08 Reticle 8nm
0 EA
- - SAFE
R-HNA-08 High-NA EUV Reticle Reticle 8nm
0 EA
- - SAFE
P-BGA BGA Package Package -
0 EA
- 1 SAFE
P-DIP DIP Package Package -
0 EA
- - SAFE
P-FCBGA FCBGA Package Package -
0 EA
- 3 SAFE
P-LGA LGA Package Package -
0 EA
- 1 SAFE
P-QFN QFN Package Package -
0 EA
- 2 SAFE
P-WLCSP WLCSP Package Package -
0 EA
- 3 SAFE
MT-NH3 NH3 (암모니아) 가스 -
450 kg
180d - HAZ
MT-WF6 WF6 (육불화텅스텐) 가스 -
280 kg
180d - HAZ
MT-CMP-S CMP Slurry 화학물질 -
220 L
60d - HAZ
MT-COBALT 코발트 (Co Sputter) 화학물질 -
35 kg
180d - HAZ
MT-HF HF (불화수소) 화학물질 -
20 L
90d - HAZ
MT-IPA IPA (이소프로필알코올) 화학물질 -
1,200 L
365d - HAZ
MT-PR Photoresist 화학물질 -
85 L
90d - HAZ
MT-RUTH Ruthenium Precursor 화학물질 -
19 kg
90d - HAZ